Advt. No.: 01/NITK/2020
Applications are invited from the interested candidates for the post of JRF to work on the R&D project
titled “Design and Development of GaN HEMT Based LNA for L5 and S-band IRNSS
Receiver”
No.of Post: 1
Pay Scale: Rs. 31,000/-
(Per month for
first two years)
Rs. 35,000/-
(Per month for
third year years
plus HRA as per
norms
Educational Qualification:
BE/B.Tech in Electronics and Communication Engineering/Electronics Engineering/Information
Technology/Information Science Engineering/Computer Science and Engineering and M. Tech./MS(R)/M.E./equivalent in Electronics and Communication Engineering/VLSI Design/RF &
Microwave Engg with expertise in Analog IC design, RF circuit and systems and Microwave circuits. Candidates must have at least 6.5/10 CGPA or 60 percent marks in aggregate from a recognized
technical institute or university as a full time program. Applicant must be GATE qualified. A good
GATE score will be an added advantage. Those who are appearing for M. Tech/ME last semester may also
apply. Proof of M. Tech/ME certificate has to be provided during the time of interview.
Age limit: Not more than 28 Years. Age relaxation will be provided as per SERB-DST, GoI
norms.