Title of project: Nonlinear GaN HEMT Device Characterization for Power Amplifier Design and Implementation at X-Band Frequencies.
Qualifications: M.E/M Tech. in Electronics & Communication or equivalent with CGPA above 7.0 (on 10.0 scale) or percentage greater than 70% aggregate The candidate with exposure and interest on FET/HEMT device characterization and modelling, power amplifier design, RF active circuit design, Analog circuit design, microelectronics will be given preference.
Job description: The JRF will be involved in the research and development activities related to GaN HEMT Modelling, RF device characterization & power amplifier design. Based on performance, the JRF may be considered for PhD enrollment, subject to his eligibilify as per the institute norms.
Indian Institute of Technology - Roorkee is among the foremost of institutes of national importance in higher technological education and in engineering, basic and applied research. Since its establishment, the Institute has played a vital role in providing the technical manpower and know-how to the country and in pursuit of research. The Institute ranks amongst the best technological institutions in the world and has contributed to all sectors of technological development.