Title of project: Nonlinear GaN HEMT Device Characterization for Power Amplifier Design and Implementation at X-Band Frequencies.
Qualifications: M.E/M Tech. in Electronics & Communication or equivalent with CGPA above 7.0 (on 10.0 scale) or percentage greater than 70% aggregate The candidate with exposure and interest on FET/HEMT device characterization and modelling, power amplifier design, RF active circuit design, Analog circuit design, microelectronics will be given preference.
Job description: The JRF will be involved in the research and development activities related to GaN HEMT Modelling, RF device characterization & power amplifier design. Based on performance, the JRF may be considered for PhD enrollment, subject to his eligibilify as per the institute norms.
The
last date for application to be submitted to the following emails of Principal
Investigator is 25/01/2020 5 PM. Emails:- Karunrawal@ernail.cqm, karunfec@iitr.ac.in
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Company Description
Indian Institute of Technology - Roorkee is among the foremost of institutes of national importance in higher technological education and in engineering, basic and applied research. Since its establishment, the Institute has played a vital role in providing the technical manpower and know-how to the country and in pursuit of research. The Institute ranks amongst the best technological institutions in the world and has contributed to all sectors of technological development.
