NITMGH/ES/DST/TDT/DDP-36/2021-22/1140
Applications are invited from motivated and eligible candidates for the position of Junior Research Fellow (JRF) for the project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)”
i. under Technology Development Transfer (TDT) Division and Device Development Programme (DDP) Scheme, Department of Science and Technology (DST),Government of India in the Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Meghalaya.
1. Position: Junior Research Fellow (JRF)
2. No. of position available: One (01)
3. Qualifications:
(a) B.Tech./M.Tech. in Electronics Engineering with specialization in Electronics/VLSI/ MEMS and related areas, with a minimum of 60% marks. The candidates must have cleared GATE exam. Candidates with B.Tech. degree only must have a valid Gate Score.
4. Desirable qualifications: Candidates having experience of working with MEMS / Semiconductor simulation softwares and hands-on-experience in fabrication of MEMS / Semiconductor devices will be preferred for the JRF position in the project.
5. Consolidated monthly compensation / Fellowship: Rs. 31,000.00 + HRA @ 8% per month. Note: HRA will be given only if accommodation in the Institute Hostel is not available.
6. Duration: Initial appointment is for one year, which is extendable up to the end of the project duration based on the performance of the candidate
Age Limit:
Must not be over 28 years on last date of submission of application form. Age relaxation will be given as per GOI norms.